次〝兆分之一秒〞響應之研究
| dc.contributor.author | 荊鳳德 | en_US |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:09Z | |
| dc.date.available | 2014-12-13T10:37:09Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-037 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=444579&docId=80527 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94435 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 兆分之一秒 | zh_TW |
| dc.subject | 響應 | zh_TW |
| dc.subject | 半導體 | zh_TW |
| dc.subject | 砷化鎵 | zh_TW |
| dc.subject | 低溫成長 | zh_TW |
| dc.subject | Pico second | en_US |
| dc.subject | Response | en_US |
| dc.subject | Semiconductor | en_US |
| dc.subject | GaAs | en_US |
| dc.subject | Low-temperature growth | en_US |
| dc.title | 次〝兆分之一秒〞響應之研究 | zh_TW |
| dc.title | Sub-pS Study | en_US |
| dc.type | Plan | en_US |