Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

Abstract

A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.