Optimized noise and consistent RF model for 0.18 mu m MOSFETs
| dc.citation.epage | 112 | en_US |
| dc.citation.spage | 109 | en_US |
| dc.contributor.author | Huang, CH | en_US |
| dc.contributor.author | Li, HY | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Liang, V | en_US |
| dc.contributor.author | Chien, SC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:10Z | |
| dc.date.available | 2014-12-08T15:26:10Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.abstract | Strong dependence of finger number on minimum noise figure (NFmin) is observed in 0.18 mum MOSFETs. A lowest NFmin of 0.93 dB is measured at 5.8 GHz using 50 fingers but increases as either increasing or decreasing finger number. We have used a self-consistent S-parameter and NFmin model to analysis this abnormal finger number dependence, and the reason is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. | en_US |
| dc.identifier.doi | 10.1109/VTSA.2003.1252564 | en_US |
| dc.identifier.isbn | 0-7803-7765-6 | en_US |
| dc.identifier.journal | 2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VTSA.2003.1252564 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18560 | |
| dc.identifier.wosnumber | WOS:000189391000029 | |
| dc.language.iso | en_US | en_US |
| dc.title | Optimized noise and consistent RF model for 0.18 mu m MOSFETs | en_US |
| dc.type | Proceedings Paper | en_US |