FOWLER-NORDHEIM LIMITED BAND-TO-BAND TUNNELING (FNBB) FOR P-MOSFET GATE CURRENT IN A FLOATING BULK CONDITION

Abstract

A new mechanism of Fowler-Nordheim tunneling limited band-to-band tunneling (FNBB) has been identified to be responsible for the gate current measured from p-MOSFETs with the bulk (n-well) floated. This mechanism has been found to occur in the gate-to-drain overlap region. Two-dimensional device simulations have successfully reproduced this gate current and thus the physical parameter values of the band-to-band tunneling model have been obtained.