Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography
| dc.contributor.author | Chen, Sung-Wen Huang | en_US |
| dc.contributor.author | Wang, Sheng-Wen | en_US |
| dc.contributor.author | Hong, Kuo-Bin | en_US |
| dc.contributor.author | Tsai, Yu-Lin | en_US |
| dc.contributor.author | Tzou, An-Jye | en_US |
| dc.contributor.author | Chu, You-Chen | en_US |
| dc.contributor.author | Lee, Po-Tsung | en_US |
| dc.contributor.author | Lin, Chien-Chung | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.department | 光電系統研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Photonic System | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2018-08-21T05:57:10Z | |
| dc.date.available | 2018-08-21T05:57:10Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer. | en_US |
| dc.identifier.issn | 2160-9020 | en_US |
| dc.identifier.journal | 2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147146 | |
| dc.identifier.wosnumber | WOS:000427296202385 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Wavelength Tuning in InGaN/GaN Light-emitting Diodes with Strain-induced Through Nanosphere Lithography | en_US |
| dc.type | Proceedings Paper | en_US |
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