High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization

Abstract

High-performance low-temperature polycrystalline-silicon thin-film transistors (TFTs) have been fabricated by heat-retaining enhanced crystallization (H-REC). In the H-REC technology, a heat-retaining capping layer (HRL) is applied on the prepattern amorphous silicon islands to slow down the heat dissipation effectively. It thereby retains long duration of melting process and further enhances poly-Si-grain lateral growth. With a single shot of laser irradiation, the location-controllable poly-Si active layer with 7-mu m length of grain size can be formed successfully. In addition, in this letter, the H-REC poly-Si TFT with dual gates is studied to enhanced electrical performance and stability.