Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching

Abstract

In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive inn etching. Using this fabrication method to form nanoscaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.