A high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology

dc.citation.epage	1289	en_US
dc.citation.spage	1288	en_US
dc.contributor.author	Wu, Tzung-Han	en_US
dc.contributor.author	Meng, Chinchun	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2014-12-08T15:24:43Z
dc.date.available	2014-12-08T15:24:43Z
dc.date.issued	2006	en_US
dc.description.abstract	A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.	en_US
dc.identifier.isbn	978-1-4244-0548-0	en_US
dc.identifier.issn	0886-1420	en_US
dc.identifier.journal	TENCON 2006 - 2006 IEEE REGION 10 CONFERENCE, VOLS 1-4	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17171
dc.identifier.wosnumber	WOS:000246127502058
dc.language.iso	en_US	en_US
dc.subject	SiGeBiCMOS	en_US
dc.subject	sub-harmonic mixer	en_US
dc.subject	Gilbert mixer	en_US
dc.subject	se6r-mixing	en_US
dc.subject	2LO-to-RF isolation	en_US
dc.title	A high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology	en_US
dc.type	Proceedings Paper	en_US

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