THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas

Abstract

We compare the performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs (multi-GaAs:As+) and semi-insulating GaAs. High damage threshold biasing (>60 kV/cm) and large saturation optical-pumping power (similar to20 mW) for multi-GaAs:As+ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As+ was estimated to be about 150 cm(2)/V/s, which was comparable to that of. low,temperature GaAs. (C) 2003 American Institute of Physics.