A SILICON-BASED PARABOLIC SUB-THz REFLECTOR ANTENNA FOR GAIN ENHANCEMENT AND NEAR-FIELD FOCUS APPLICATIONS

Abstract

This paper presents the first silicon-based parabolic Sub-THz reflector antenna with corresponding fabrication processes. The antenna is side fed with an on-chip 340 GHz patch antenna on a reflector made of stacked micromachined silicon substrates with a parabolic-shaped Kapton film coated with aluminum on top. The antenna with a size of 18 x 18 x4 mm(3) and an aperture of similar to 10mm can be easily integrated with monolithic microwave integrated circuit sources. i.e. 40 um CMOS triple-push oscillator in this case, and exhibit not only similar to 12.4 dB directive gain enhancement and 4.34 degrees HPBW (Half Power Beam Width) for far field radiation but also an excellent near field focus characteristic with a 28.5 mm depth of field (DOF).