三五族氮化合物半導體薄膜之物理特性研究---子計畫I：GaN類半導體材料及物理結構光性之研究(III)

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882112M009021.pdf (484.12 KB)

Date

1999

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氮化鎵, 光學性質, 雜質, 時域解析冷激光, GaN, Optical property, Impurity, Time-resolved photoluminescence

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https://www.grb.gov.tw/search/planDetail?id=426394&docId=76148
 https://ir.lib.nycu.edu.tw/handle/11536/94391

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研究計畫;;Research Plans

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