Electric field simulation of the TBC-OTFTs with meshed source electrodes

Abstract

It was found that Fowler-Nordheim tunneling effect is the dominant mechanism for vertical channel organic thin film transistors with ultra short channel. In order to improve the device saturation characteristics and to lower down the leakage current, a new device structure with meshed source electrodes was introduced. By using Silvaco TCAD simulation, obvious fringing field effect was observed when the meshed source structure was used. The fringing field would suppress Fowler-Nordheim tunneling effect and improve the gate control ability. As a result, lower leakage current and better saturation characteristics could be obtained.