Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-mu m-Thick n-GaN Template

Abstract

Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10-mu m-thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10-mu m-thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.