Gate oxynitride grown in N2O and annealed in no using rapid thermal processing

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dc.citation.epage246en_US
dc.citation.spage241en_US
dc.citation.volume387en_US
dc.contributor.authorSun, SCen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorLou, JCen_US
dc.contributor.authorYen, LWen_US
dc.contributor.authorLin, CJen_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.date.accessioned2014-12-08T15:27:45Z
dc.date.available2014-12-08T15:27:45Z
dc.date.issued1995en_US
dc.identifier.isbn1-55899-290-1en_US
dc.identifier.issn0272-9172en_US
dc.identifier.journalRAPID THERMAL AND INTEGRATED PROCESSING IVen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20005
dc.identifier.wosnumberWOS:A1995BE31M00029
dc.language.isoen_USen_US
dc.titleGate oxynitride grown in N2O and annealed in no using rapid thermal processingen_US
dc.typeProceedings Paperen_US

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