Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction

Abstract

Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n(+)/p junction are studied in this work. At an adequately high ion-implantation temperature (150 degrees C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting similar to 1 x 10(6) J(ON)/J(OFF) ratio is achieved.