製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術發展---低溫薄膜電晶體之相關薄絕緣層之製備研究(I)

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882215E009054.pdf (412 KB)

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1999

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複晶矽, 薄絕緣層, 化學氣相沈積法, 電漿加強化學氣相沈積法, 快速熱處理, Polysilicon, Thin dielectric, Chemical vapor deposition, Plasma-enhance CVD, Rapid thermal process (RTP)

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https://www.grb.gov.tw/search/planDetail?id=444146&docId=80428
 https://ir.lib.nycu.edu.tw/handle/11536/94527

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研究計畫;;Research Plans

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