LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE

Abstract

The effects of internal oxygen impurities released from the TiSiO2 reaction on the lateral silicide growth using the a-Si/Ti bilayer structure are presented. The lateral silicide growth can be effectively retarded by internal oxygen impurities using a-Si/Ti bilayer process after silicidation at a temperature below 700 degrees C. Compared with the simultaneously processed single Ti layer process, it is observed that both high-level oxygen impurities and their redistribution in the possible Si-diffusion paths play the same important role on the suppression of the lateral silicide growth. Finally, the oxygen redistribution-dependent kinetics is developed to give a self-consistent explanation fo; the experimental observations from both the single Ti layer process and the a-Si/Ti bilayer process.