Investigation of Hot Carrier Reliability of Ultrathin Poly-Si Nanobelt Junctionless (UTNB-JL) Transistors on Different Underlying Insulators

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dc.citation.woscount0en_US
dc.contributor.authorChang, Jen-Hongen_US
dc.contributor.authorChung, Chun-Chihen_US
dc.contributor.authorLin, Jer-Yien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2017-04-21T06:50:13Z
dc.date.available2017-04-21T06:50:13Z
dc.date.issued2016en_US
dc.description.abstractIn this work, we investigate the hot carrier stress (HCS) of ultrathin poly-Si nanobelt junctionless transistors on different insulator (TEOS and Si3N4). Time exponent n suggests the oxide trap charge is the dominant mechanism. The subthreshold slope (S.S.) is improved by acceptor-like interface states generated after HCS, and different S.S. improvement between JL_O and JL_N is caused by surface roughness of channel films resulting from nucleation during channel deposition in LPCVD step.en_US
dc.identifier.isbn978-1-5090-2439-1en_US
dc.identifier.issn2378-8593en_US
dc.identifier.journal2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134352
dc.identifier.wosnumberWOS:000390432600005en_US
dc.language.isoen_USen_US
dc.subjectultrathin channelen_US
dc.subjectJunctionlessen_US
dc.subjecthot carrieren_US
dc.subjectoxide chargeen_US
dc.titleInvestigation of Hot Carrier Reliability of Ultrathin Poly-Si Nanobelt Junctionless (UTNB-JL) Transistors on Different Underlying Insulatorsen_US
dc.typeProceedings Paperen_US

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