INTERCONNECTION LOSS FROM SUBSTRATE EFFECTS ON LNA PERFORMANCE AND DESIGN ACCURACY

Abstract

A 5.2 GHz 0.18-mu m SiGe BiCMOS low noise amplifier is implemented with guided-wave interconnections in this letter. These interconnections reduce the substrate skin and proximity effects and hence are suitable for high frequency circuits. The guided interconnections bring 1.7-dB gain and 0.55-dB noise figure enhancement for the low noise amplifier. In addition, accurate and simple design methodology relies on the complete models of components and interconnections when the poststimulation from the rc extraction is not enough for the high,frequency circuit design. The measurement results give excellent agreements with the schematic simulation. (C) 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 144-146, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23968