Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

Wang, Hsun-Wen; Yu, Pei-Chen; Han, Hau-Vei; Lin, Chien-Chung; Kuo, Hao-Chung; Lin, Shiuan-Huei

Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

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2012

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The characteristics of non-polar double heterojunction GaN/InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N. (C) 2012 Optical Society of America

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https://ir.lib.nycu.edu.tw/handle/11536/21139

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Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

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