Interface effect of oxygen doping in polythiophene

Abstract

Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl groups of the interface and irreversible after long time in vacuum except for quartz. For a given interface, dip-coated film always has a higher doping level and slower de-doping than spin-coated films because of higher porosity. With careful control of the oxygen level transistor with mobility of 0.12 cm(2)/V s and on-off ratio of 29,000 are obtained for dip-coated film on glass substrate. (C) 2009 Elsevier B.V. All rights reserved.