Novel vertical polysilicon thin-film transistor with excimer-laser annealing
| dc.citation.epage | 2126 | en_US |
| dc.citation.issue | 4B | en_US |
| dc.citation.spage | 2123 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.contributor.author | Lee, MZ | en_US |
| dc.contributor.author | Lee, CL | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:08Z | |
| dc.date.available | 2014-12-08T15:41:08Z | |
| dc.date.issued | 2003-04-01 | en_US |
| dc.description.abstract | In this paper, we propose a novel self-alignment vertical thin-film transistor (VTFT) structure with excimer laser annealing (ELA). The ELA on source and drain decreases the process temperature, suppresses the lateral diffusion of dopants in short channel devices and increases the driving current. Furthermore, the VTFTs have high carrier mobility, compared to conventional polysilicon thin film transistors (TFTs). | en_US |
| dc.identifier.doi | 10.1143/JJAP.42.2123 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.2123 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27993 | |
| dc.identifier.wosnumber | WOS:000183283700064 | |
| dc.language.iso | en_US | en_US |
| dc.subject | vertical | en_US |
| dc.subject | TFT | en_US |
| dc.subject | VTFT | en_US |
| dc.subject | ELA and self-alignment | en_US |
| dc.title | Novel vertical polysilicon thin-film transistor with excimer-laser annealing | en_US |
| dc.type | Article; Proceedings Paper | en_US |