Implantation induced defects in the retrograde well with a buried layer

Abstract

This work investigates the implantation induced extended defects in the retrograde p- and n-well with/without a buried layer after postimplantation thermal annealing at 950degreesC in N(2) ambient. A preferential etchant of CrO(3)/HF mixed solution was used to delineate the defects induced by high-energy ion implantation. It is found that the extended defects elongated to the top surface of the retrograde well with a buried layer, which was implanted with high-energy boron ion at 1500 keV to a dose of 3x10(13) cm(-2), resulting in the etching pits of extended defects at a density of about 10(5) cm(-2). (C) 2002 The Electrochemical Society.