II-VI族稀磁性半導體之研究與凝體物理理論探討

Simple item page
dc.contributor.author褚德三en_US
dc.contributor.authorCHUU DER SANen_US
dc.contributor.department交通大學電子物理系zh_TW
dc.date.accessioned2014-12-13T10:37:08Z
dc.date.available2014-12-13T10:37:08Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2112-M009-004zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=426140&docId=76090en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94414
dc.language.isozh_TWen_US
dc.subject稀磁性半導體薄膜zh_TW
dc.subject凝體物理zh_TW
dc.subject高壓相變zh_TW
dc.subjectDiluted magnetic semiconductor thin filmen_US
dc.subjectCondensed matter physicsen_US
dc.subjectHigh pressure induced phase transitionen_US
dc.titleII-VI族稀磁性半導體之研究與凝體物理理論探討zh_TW
dc.titleInvestigation of Diluted Magnetic II-VI Semiconductors and Theoretical Studies of Condensed Matter Physicsen_US
dc.typePlanen_US

Files

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

研究計畫;;Research Plans