The Impact of Layout Dependent Effects on Mobility and Flicker Noise in Nanoscale Multifinger nMOSFETs for RF and Analog Design

Abstract

The impact of layout dependent effects on multi-finger (MF) device parameters, such as transconductance (g(m)), effective mobility (mu(eff)), source resistance (R-S), and flicker noise was investigated in this paper to facilitate RF and analog optimization design. MF devices with wide poly-to-poly (PO-PO) space can achieve higher mu(eff) and two-end source line layout can effectively reduce R-S to improve g(m). However, the wide PO-PO space yielding higher mu(eff) cannot ensure lower flicker noise in nMOSFETs, which is dominated by number fluctuation model.