Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate

Abstract

We have grown GaAs antidots in InAs matrix on (10 0) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5 ML. For 2.5 ML GaAs deposition, the grown antidots have a size of about 15-35 nm in base diameter and about 2-4 run in height with a density about 3-4 x 10(10) cm(-2). (C) 2003 Elsevier B.V. All rights reserved.