三五族氮化合物半導體薄膜之物理特性研究---子計畫二:GaN類半導體材料及物理結構之薄膜製備與物理特性之研究(II)

dc.contributor.author陳衛國en_US
dc.contributor.authorWEI-KUOCHENen_US
dc.contributor.department交通大學電子物理系zh_TW
dc.date.accessioned2014-12-13T10:37:59Z
dc.date.available2014-12-13T10:37:59Z
dc.date.issued1998en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC87-2112-M009-021zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=370223&docId=66503en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94994
dc.language.isozh_TWen_US
dc.subject半導體材料zh_TW
dc.subject薄膜zh_TW
dc.subject物理特性zh_TW
dc.subjectSemiconducting materialen_US
dc.subjectThin filmen_US
dc.subjectPhysical propertyen_US
dc.title三五族氮化合物半導體薄膜之物理特性研究---子計畫二:GaN類半導體材料及物理結構之薄膜製備與物理特性之研究(II)zh_TW
dc.titleCharacterization and Growth of GaN Related Compounds and Their Heterostructures(II)en_US
dc.typePlanen_US

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