Perylenetetracarboxylic di-imide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW

Abstract

High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis(4-trifluoromethoxybenzyl)-perylene-3,4,9,10-tetracarboxylic di-imide, were fabricated, and the effects of crystal packing on indium tin oxide and molybdenum-tungsten alloy were shown in two different electric characteristics. The estimated work function of indium tin oxide and molybdenum-tungsten alloy were 4.7 and 5.0eV. The calculated lowest unoccupied molecular orbital energy level of the organic material was 3.7eV. Transistors with indium tin oxide bottom electrodes exhibited a high mobility of 3.37 x 10(2) cm(2) V(-1) s(1), an on/off current ratio of 6.5 x 10(5) and threshold voltage of-4.0 V. (C) 2008 Elsevier B.V All rights reserved.