蕭特基能障SOI金氧半電晶體元件研製與分析(II)

dc.contributor.author黃調元en_US
dc.contributor.authorTIAO-YUANHUANGen_US
dc.contributor.department交通大學電子工程系zh_TW
dc.date.accessioned2014-12-13T10:34:54Z
dc.date.available2014-12-13T10:34:54Z
dc.date.issued2002en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC91-2215-E009-042zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=784397&docId=150768en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/93069
dc.language.isozh_TWen_US
dc.title蕭特基能障SOI金氧半電晶體元件研製與分析(II)zh_TW
dc.titleFabrication and Characterization of SOI Schottky Barrier MOSFET (II)en_US
dc.typePlanen_US

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