Fluorinated HfO2 Gate Dielectrics Engineering for CMOS by pre- and post-CF4 Plasma Passivation

Abstract

In this paper, we demonstrate TaN/Fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.