Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride

Abstract

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon-silicon (Si-Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si-Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.