Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

Abstract

In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T(cat)) regime. We studied the influence of high T(cat) on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T(cat), the distance between catalyzer and substrate (D(cs)), and the deposition pressure (P). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim