Injection-locked Galnp/GaAs HBT frequency divider with stacked transformers

Abstract

The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequecy divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mV the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals. Inc.