電阻式記憶元件操作特性與可靠性之統計測量及三度空間原子與電荷傳輸模擬

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dc.contributor.author汪大暉en_US
dc.contributor.authorWANG TAHUIen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:30:53Z
dc.date.available2014-12-13T10:30:53Z
dc.date.issued2013en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC102-2221-E009-096-MY2zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=3096850&docId=418031en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/90530
dc.language.isozh_TWen_US
dc.title電阻式記憶元件操作特性與可靠性之統計測量及三度空間原子與電荷傳輸模擬zh_TW
dc.titleStatistical Characterization and 3D Atomistic Simulation Based on Electron Hopping and Thermo-chemical Dielectric Breakdown in RRAMen_US
dc.typePlanen_US

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