IMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS

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dc.citation.epage508en_US
dc.citation.spage505en_US
dc.contributor.authorYANG, CKen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:51Z
dc.date.available2014-12-08T15:27:51Z
dc.date.issued1994en_US
dc.identifier.isbn0-7803-2111-1en_US
dc.identifier.journalINTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGESTen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20110
dc.identifier.wosnumberWOS:A1994BC55U00115
dc.language.isoen_USen_US
dc.titleIMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMSen_US
dc.typeProceedings Paperen_US

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