Metal nanocrystals as charge storage nodes for nonvolatile memory devices
| dc.citation.epage | 2926 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 2920 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.contributor.author | Yeh, P. H. | en_US |
| dc.contributor.author | Chen, L. J. | en_US |
| dc.contributor.author | Liu, P. T. | en_US |
| dc.contributor.author | Wang, D. Y. | en_US |
| dc.contributor.author | Chang, T. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:37Z | |
| dc.date.available | 2014-12-08T15:06:37Z | |
| dc.date.issued | 2007-02-10 | en_US |
| dc.description.abstract | The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.electacta.2006.09.006 | en_US |
| dc.identifier.issn | 0013-4686 | en_US |
| dc.identifier.journal | ELECTROCHIMICA ACTA | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.electacta.2006.09.006 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5179 | |
| dc.identifier.wosnumber | WOS:000244552300024 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Ni nanocrystals | en_US |
| dc.subject | NiSi2 nanocrystals | en_US |
| dc.subject | CoSi2 nanocrystals | en_US |
| dc.subject | metal nanocrystals | en_US |
| dc.subject | nonvolatile memory | en_US |
| dc.title | Metal nanocrystals as charge storage nodes for nonvolatile memory devices | en_US |
| dc.type | Article; Proceedings Paper | en_US |