Very high kappa and high density TiTaO MIM capacitors for analog and RF applications

Abstract

For the first time, high density (10.3 fF/mu m(2)), low voltage linearity (alpha = 89 ppm/V-2) and small leakage current (1.2 x 10(-8) A/cm(2) or 5.8 fA/[pF circle V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-kappa TiTaO (kappa = 45) and high work-function Ir capacitor, which further improve to very high 23 fF/mu m(2) density and low 81 ppm/V-2 linearity for higher speed analog/RF ICs at 1 GHz, using the fast a decay mechanism with increasing frequency.