Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors

Abstract

In-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 mu m, but also enhances the optical response from GaAs.