Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer

dc.citation.epage	55	en_US
dc.citation.spage	54	en_US
dc.contributor.author	Lu, Ching-Sen	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Chen, Ying-Hung	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:16:49Z
dc.date.available	2014-12-08T15:16:49Z
dc.date.issued	2007	en_US
dc.description.abstract	Although a compressive SiN capping could effectively boost the drive current of PMOS devices, it may concomitantly worsen the NBTI characteristics owing to the high hydrogen content in the SiN layer which might diffuse to the channel region during processing. To address this issue, inserting a thin 3nm HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the performance enhancement by SiN capping.	en_US
dc.identifier.isbn	978-1-4244-0584-8	en_US
dc.identifier.journal	2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/12368
dc.identifier.wosnumber	WOS:000247059300025
dc.language.iso	en_US	en_US
dc.title	Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer	en_US
dc.type	Proceedings Paper	en_US

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