Transmission line noise from standard and proton-implanted Si

Abstract

We have measured the NF(min) of transmission lines on 10(6) ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Trransmission lines on proton implanted Si shows the lowest NF(min) of less than 0.2dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carriers trapping and de-trapping because of the very small diffusion length to metal line.