Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics

Abstract

This paper demonstrates, for the first time, the potential of using flip-chip packaging to connect multiple AlGaN/GaN high-electron-mobility transistors (HEMTs) in parallel for application in power electronics. The electrical and thermal properties of both the bare and the packaged devices were experimentally investigated via pulsed current-voltage (I-V) measurements. Compared to the bare die, less than one-fifth the thermal resistance (R-th), triple the output current, and one-third the on-resistance (R-on) with temperature insensibility were observed when three transistors were connected in parallel through flip-chip packaging. Superior performance such as this makes flip-chip packaging a potential technology for high power GaN electronic applications. (C) 2015 The Japan Society of Applied Physics