Failure Analysis of Gate-all-around Nanowire Field Effect Transistor Under TLP Test

Abstract

Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.