銅的化學氣相沉積技術及其在深次微米積體電路之應用的研究(II)

dc.contributor.author	陳茂傑	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
dc.date.accessioned	2014-12-13T10:38:39Z
dc.date.available	2014-12-13T10:38:39Z
dc.date.issued	1997	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC86-2215-E009-040	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=278865&docId=50212	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/95593
dc.language.iso	zh_TW	en_US
dc.subject	銅	zh_TW
dc.subject	化學氣相沉積	zh_TW
dc.subject	擴散障壁材料	zh_TW
dc.subject	惰化	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	Cu	en_US
dc.subject	CVD	en_US
dc.subject	Barrier metal	en_US
dc.subject	Passivation	en_US
dc.subject	Deep submicron	en_US
dc.title	銅的化學氣相沉積技術及其在深次微米積體電路之應用的研究(II)	zh_TW
dc.title	Cu-CVD Technology and Reliability Issues of Cu Metallization Relevant to ULSI Application (Ⅱ)	en_US
dc.type	Plan	en_US

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