8吋晶圓半導體LPCVD製程設備之研發---子計劃IV：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(III)

Simple item page
dc.contributor.author曾俊元en_US
dc.contributor.authorTSEUNG-YUENTSENGen_US
dc.contributor.department交通大學電子工程系zh_TW
dc.date.accessioned2014-12-13T10:36:59Z
dc.date.available2014-12-13T10:36:59Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2218-E009-004zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418203&docId=74189en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94323
dc.language.isozh_TWen_US
dc.subject氧化鉭zh_TW
dc.subject低壓化學氣相沈積法zh_TW
dc.subject薄膜生長zh_TW
dc.subject晶圓zh_TW
dc.subjectTantalum oxideen_US
dc.subjectLow pressure chemical vaporization deposition (LPCVD)en_US
dc.subjectThin film growthen_US
dc.subjectWaferen_US
dc.title8吋晶圓半導體LPCVD製程設備之研發---子計劃IV：利用LPCVD法成長Ta/sub 2/O/sub 5/薄膜與特性分析(III)zh_TW
dc.titleGrowth and Characterization of LPCVD Ta/sub 2/O/sub 5/ Thin Films (III)en_US
dc.typePlanen_US

Files

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

研究計畫;;Research Plans