Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

Abstract

We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.