The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
| dc.citation.epage | 376 | en_US |
| dc.citation.spage | 373 | en_US |
| dc.contributor.author | Huang, CH | en_US |
| dc.contributor.author | Chan, KT | en_US |
| dc.contributor.author | Chen, CY | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Huang, GW | en_US |
| dc.contributor.author | Tseng, C | en_US |
| dc.contributor.author | Liang, V | en_US |
| dc.contributor.author | Chen, JK | en_US |
| dc.contributor.author | Chien, SC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:10Z | |
| dc.date.available | 2014-12-08T15:26:10Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.abstract | As scaling down the RF MOSFET from 0.18 to 0.13 mum technology nodes, the f(T) increases but the NFmin becomes worse by increasing similar to0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 mum MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 mum is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect. | en_US |
| dc.identifier.doi | 10.1109/RFIC.2003.1213965 | en_US |
| dc.identifier.isbn | 0-7803-7694-3 | en_US |
| dc.identifier.issn | 1529-2517 | en_US |
| dc.identifier.journal | 2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RFIC.2003.1213965 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18553 | |
| dc.identifier.wosnumber | WOS:000184031700085 | |
| dc.language.iso | en_US | en_US |
| dc.title | The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes | en_US |
| dc.type | Proceedings Paper | en_US |