High Performance and Reliability of Poly-Si Thin-Film Transistors Using Nickel Drive-In Induced Laterally Crystallization

Abstract

In this study, polycrystalline silicon thin film transistors using drive-in Ni induced lateral crystallization (DILC) was proposed. In DILC, F+ implantation was used to drive Ni in the alpha-Si layer. To reduce the Ni contamination, the remained Ni film was then removed, and subsequently annealed at 590 degrees C. It was found DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high on-state current, lower trap state density, smaller standard deviations, and low off-state leakage current compared with conventional Ni-metal-induced lateral crystallization (MILC) TFTs.