A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structures

Abstract

Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO(2)/Fe structure due to the presence of a thin FeO(x) transition layer at the SiO(2)/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO(2)/Fe(0.73)Pt(0.27) structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeO(x) layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeO(x) phase transition characteristics.