A numerical model for simulating MOSFET gate current degradation by considering the interface state generation
| dc.citation.epage | 116 | en_US |
| dc.citation.spage | 115 | en_US |
| dc.contributor.author | Yih, CM | en_US |
| dc.contributor.author | Chung, SS | en_US |
| dc.contributor.author | Hsu, CCH | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:35Z | |
| dc.date.available | 2014-12-08T15:27:35Z | |
| dc.date.issued | 1996 | en_US |
| dc.identifier.isbn | 0-7803-2745-4 | en_US |
| dc.identifier.journal | SISPAD '96 - 1996 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19842 | |
| dc.identifier.wosnumber | WOS:A1996BG48K00053 | |
| dc.language.iso | en_US | en_US |
| dc.title | A numerical model for simulating MOSFET gate current degradation by considering the interface state generation | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: