Design of 2xVDD-tolerant I/O buffer with considerations of gate-oxide reliability and hot-carrier degradation

Abstract

A new 2xVDD-tolerant I/O buffer circuit, realized with only 1xVDD devices in nanoscale CMOS technology, to prevent transistors against gate-oxide reliability and hot-carrier degradation is proposed. The new proposed 2xVDD-tolerant I/O buffer has been implemented in a 130-nm CMOS process to serve a 2.5-V/1.2-V mixed-voltage interface without using the additional thick gate-oxide (2.5-V) devices. This 2xVDD-tolerant I/O buffer has been successfully confirmed by the experimental results with a signal speed of up to 133 MHz for PCI-X application.